A wideband cryogenic microwave low-noise amplifier

• Boris I. Ivanov,
• Dmitri I. Volkhin,
• Ilya L. Novikov,
• Dmitri K. Pitsun,
• Dmitri O. Moskalev,
• Ilya A. Rodionov,
• Evgeni Il’ichev and
• Aleksey G. Vostretsov

Beilstein J. Nanotechnol. 2020, 11, 1484–1491, doi:10.3762/bjnano.11.131

• -electron-mobility transistor (HEMT); HEMT amplifier; microwave cryogenic amplifier; microwave superconducting circuit readout; superconducting qubit readout; Introduction Quantum microwave devices are widely used for different applications ranging from radio astronomy [1][2][3] to quantum information

• heterojunction bipolar technology (HBT). Recently, it has been shown that cryogenic amplifiers based on SiGe HBT [16][17][18] can provide low noise levels and high gain at 4 K. They are suitable for superconducting qubit readout [25][26] and radio astronomy systems [12][14]. In order to obtain high gain values

• equivalent noise temperature and high gain. Therefore, it is suitable for the superconducting qubit readout. The main parameters in Table 1 were obtained for the optimum working points for each amplifier stage with the following operating drain currents: Id1 = Id2 = 3.3 mA, Id3 = 5.8 mA, Id4 = 6 mA